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Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

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Nano Research 2024年第4期17卷 3224-3231页

作者： Jidong Huang Jingren Chen Junhua Meng Siyu Zhang Ji Jiang Jingzhen Li Libin Zeng Zhigang Yin Jinliang Wu Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Faculty of Science Beijing University of TechnologyBeijing 100124China

As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote epitaxy.However,there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy.Herein,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer h-BN.The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)epitaxy.Due to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices.

关键词： remote epitaxy hexagonal boron nitride transition metal dichalcogenides chemical vapor deposition photodetectors

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

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National Science Review 2022年第5期9卷 30-36页

作者： Zhinan Guo Rui Cao Huide Wang Xi Zhang Fanxu Meng Xue Chen Siyan Gao David K.Sang Thi Huong Nguyen Anh Tuan Duong Jinlai Zhao Yu-Jia Zeng Sunglae Cho Bing Zhao Ping-Heng Tan Han Zhang Dianyuan Fan Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology College of Physics and Optoelectronic EngineeringShenzhen University Institute of Nanosurface Science and Engineering Guangdong Provincial Key Laboratory of MicroNano Optomechatronics EngineeringShenzhen University State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Department of Physics and Energy Harvest-Storage Research Center University of Ulsan State Key Laboratory of Supramolecular Structure and Materials Jilin University

Two-dimensional(2D) indium selenide(InSe) has been widely studied for application in transistors and photodetectors,which benefit from its excellent optoelectronic properties.Among the three specific polytypes(γ-,ε-and β-phase) of InSe,only the crystal lattice of InSe in β-phase(β-InSe) belongs to a non-symmetry point group of D6 h~4,which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices.Therefore,we prepare the stable p-type 2D-layered β-InSe via temperature gradient method.The anisotropic Raman,transport and photoresponse properties of β-InSe have been experimentally and theoretically proven,showing that theβ-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage,respectively.The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

关键词： 2D materials polarization photodetectors

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

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Journal of Semiconductors 2024年第7期45卷 61-68页

作者： Linkai Yi Daoqun Liu Wenzheng Cheng Daimo Li Guoqi Zhou Peng Zhang Bo Tang Bin Li Wenwu Wang Yan Yang Zhihua Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Electronic Electrical and Communication Engineering University of Chinese Academy of SciencesBeijing 100049China

Avalanche photodetectors(APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication(SACM)APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator(SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at-21 V, indicating a breakdown voltage greater than-21 V for the device. The APDs exhibit a unitgain responsivity of 0.5 A/W at-10 V. At-15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of-10 and-25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of-15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor(LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at-21 V and-9 dBm input power reveal signal to noise ratio(SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor(CMOS) process,shows that utilizing the peaking effect at low optical power increases bandwidth.

关键词： photodetectors optical communications responsivity 3-dB bandwidth

溶液法制备透明p型非晶磷掺杂SnO薄膜基超高速自供电光电探测器

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Science China Materials 2024年第2期67卷 690-697页

作者：徐力覃粒黄易孟伊徐建梅赵凌周炜王庆龚浩孙剑 Faculty of Materials Science and Chemistry China University of GeosciencesWuhan 430074China Zhengzhou Research Institute Harbin Institute of TechnologyZhengzhou 450046China

p型氧化物半导体具有很强的空穴局域性,难以产生容易移动的空穴载流子,用简单方法制备高光电性能的p型氧化物半导体极具挑战性.本研究采用简单溶胶-凝胶法在手套箱中制备了非晶透明p型SnO薄膜.磷(P)掺杂改善了SnO薄膜及其相应自供电异... 详细信息

p型氧化物半导体具有很强的空穴局域性,难以产生容易移动的空穴载流子,用简单方法制备高光电性能的p型氧化物半导体极具挑战性.本研究采用简单溶胶-凝胶法在手套箱中制备了非晶透明p型SnO薄膜.磷(P)掺杂改善了SnO薄膜及其相应自供电异质结光电探测器的光电性能.基于P掺杂SnO(P-SnO)的自供电异质结光电探测器的响应时间为40.29μs/76.24μs(0 V偏置),与其他p型氧化物基光电探测器相比响应时间最快.与典型的n型非晶氧化镓光电探测器相比,P-SnO光电探测器还具有最快的衰减时间.本文通过P掺杂引入杂质能级,导致光生电子-空穴对和光电流的增加以及器件性能的提高.这一工作不仅为制备高性能、低成本的p型P-SnO薄膜和光电探测器提供了一种简单的方法,而且为改进各种p型氧化物半导体和器件性能提供了一种新的途径.

关键词： p-type SnO phosphorus doping photodetectors

Two-dimensional perovskite Pb_(2)Nb_(3)O_(10) photodetectors

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Journal of Materials Science & Technology 2023年第33期164卷 95-101页

作者： Yong Zhang Jian Yao Zhen Zhang Rong Zhang Li Li Yu Teng Zongjie Shen Lixing Kang Limin Wu Xiaosheng Fang School of Electronic and Information Engineering Changshu Institute of TechnologyChangshu 215500China Division of Advanced Materials Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Department of Materials Science State Key Laboratory of Molecular Engineering of PolymersFudan UniversityShanghai 200433China College of Chemistry and Chemical Engineering Inner Mongolia UniversityHohhot 010021China

For the first time,we report high-performance two-dimensional(2D)perovskite Pb_(2)Nb_(3)O_(10) photodetectors(PNO PDs).The few-layer PNO nanosheets are obtained successfully through a simple calcination and liquid exfoliation method.The individual PNO nanosheet devices with various structures(Au-PNO-Au,Au-PNO-Ti,Ti-PNO-Ti)are fabricated and investigated.The Au-PNO-Ti device exhibits a high rectification factor(∼102)owing to a large Schottky barrier difference between the PNO nanosheet and two asymmetric electrodes.Notably,the Au-PNO-Ti device shows excellent self-powered performance,including high responsivity(2.8 A/W),high detectivity(1.1×10^(12) Jones),and fast speed(0.2/1.2 ms)at 350 nm light illumination.This work not only suggests the performance of the PNO nanosheet PDs but also sheds light on the development of high-stability and high-performance devices based on 2D perovskite niobate in the future.

关键词： Pb2Nb3O10 photodetectors Self-powered Two-dimensional Perovskite

An Effort Towards Full Graphene photodetectors

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Photonic Sensors 2022年第1期12卷 31-67页

作者： Farhad LARKI Yaser ABDI Parviz KAMELI Hadi SALAMATI Department of Physics Isfahan University of TechnologyIsfahan 84156-83111Iran Nanophysics Research Lab Department of PhysicsUniversity of TehranTehran 84156-83111Iran

Graphene as a truly 2-dimensional(2D)system is a promising candidate material for various optoelectronic applications.Implementing graphene as the main building material in ultra-broadband photodetectors has been the center of extensive research due to its unique absorption spectrum which covers most of the electro-magnetic spectra.However,one of the main challenges facing the wide application of pure graphene photodetectors has been the small optical absorption of monolayer graphene.Although novel designs were proposed to overcome this drawback,they often need complicated fabrication processes in order to integrate with the graphene photodetector.In this regard,fabrication of purely graphene photodetectors is a promising approach towards the manufacturing of simple,in expensive,and high photosensitive devices.The fabrication of full graphene photodetectors(FGPDs)is mainly based on obtaining an optimal technique for the growth of high quality graphene,modification of electronic and optical properties of the graphene,appropriate techniques for transfer of graphene from the grown substrate to the desire position,and a proper design for photodetection.Therefore,the available states of the art techniques for each step of device fabrication,along with their pros and cons,are reviewed and the possible approaches for optimization of FGPDs have been proposed.

关键词： Graphene photodetectors graphene growth photodetection

Controllable printing of large-scale compact perovskite films for flexible photodetectors

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Nano Research 2022年第2期15卷 1547-1553页

作者： Zhenkun Gu Ying Wang Shiheng Wang Ting Zhang Rudai Zhao Xiaotian Hu Zhandong Huang Meng Su Qun Xu Lihong Li Yiqiang Zhang Yanlin Song Henan Institute of Advanced Technology Green Catalysis Centerand College of ChemistrySchool of Materials Science and EngineeringZhengzhou UniversityZhengzhou 450051China Institute of Chemistry Chinese Academy of Sciences(ICCAS)Beijing National Laboratory for Molecular Sciences(BNLMS)Beijing 100190China University of Chinese Academy of Sciences Beijing 100049China

Perovskite materials are promising candidates for the next generation of wearable optoelectronics.However,due to uncontrolled crystallization and the natural brittle property of crystals,it remains a great challenge to fabricate large-scale compact and tough perovskite film.Here we report a facile method to print large-scale perovskite films with high quality for flexible photodetectors.By introducing a soluble polyethylene oxide(PEO)layer during the inkjet printing process,the nucleation and crystal growth of perovskite is well controlled.Perovskite films can be easily printed in large scale and patterned in high resolution.Moreover,this method can be extended to various kinds of perovskite materials,such as MAPbb(MA=methylammonium),MA_(3)Sb_(2)l_(9),and(BA)_(2)PbBr_(4)(BA=benzylammonium).The printed perovskite films show high quality and excellent mechanical performance.The photodetectors based on the MAPbBr3 perovskite films show a responsivity up to -1,036 mAA/V and maintain over 96.8%of the initial photocurrent after 15,000 consecutive bending cycles.This strategy provides a facile approach to prepare large-scale flexible perovskite films.It opens up new opportunities for the fabrication of diverse wearable optoelectronic devices.

关键词： inkjet printing perovskite polymer-assisted crystallization flexible photodetectors

High-performance violet phosphorus photodetectors with van der Waals-assisted contacts

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中国科学:物理学、力学、天文学英文版 2023年第9期66卷 86-93页

作者： Hao Wang Shuling Liu Peng Wang Haonan Ge Yue Chen Hailu Wang Tengfei Xu Jiaxiang Guo Yuanchen Zou Wenrui Wei Ruiqi Jiang Fang Wang Piotr Martyniuk Jinshui Miao Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China School of Physics and Photoelectric Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China Institute of Applied Physics Military University of TechnologyWarsaw 00-908Poland Frontier Institute of Chip and System Fudan UniversityShanghai 200438China School of Microelectronics Shanghai UniversityShanghai 201800China University of Chinese Academy of Sciences Beijing 100049China

Black phosphorus(BP) as a narrow-bandgap two-dimensional semiconductor material has been extensively studied. And the allotrope violet phosphorus(VP) exhibits wide bandgap properties extending the application in the visible light band. However,due to the Schottky barrier of metal/semiconductor contacts(M/S), further device application of VP is limited. Here, VP-based photodetectors with van der Waals-assisted contact were demonstrated, achieving quasi-Ohmic M/S contacts. The output characteristics in dark conditions show ultralow current at the pA level. And the device exhibits a high current on-off ratio of 10~5and a fast response speed of 8.4 ms. Furthermore, we constructed the first allotropic photodetector based on BP and VP heterojunction. The device maintains ultralow dark current(~ pA) while exhibiting faster carrier transport, with 945 μs response time and polarization detection capability. These results offer an effective way to study the optoelectronic properties of VP and promote the study of allotropic heterojunction devices.

关键词： violet phosphorus two-dimensional materials photodetectors Ohmic contact allotropic heterojunction

All-inorganic lead-free NiO_(x)/Cs_(3)Bi_(2)Br_(9) perovskite heterojunction photodetectors for ultraviolet multispectral imaging

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Nano Research 2022年第2期15卷 1094-1101页

作者： Yujin Liu Yuxin Gao Jingyi Zhi Rongqing Huang Wanjun Li Xinyue Huang Genghua Yan Zhong Ji Wenjie Mai Siyuan Laboratory Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy MaterialsDepartment of PhysicsJinan UniversityGuangzhou 510632China.

Bismuth-based perovskites are considered to be promising candidates to substitute the toxic lead-based perovskite in optoelectronics due to their excellent optoelectronic properties,high environmental friendliness,and(moisture,light,and heat)stability.However,there are still few reports about high performance bismuth-based perovskite ultraviolet photodetectors,and is more lacking in ultraviolet imaging demonstration.Herein,we reported a self-powered NiO_(x)/Cs_(3)Bi_(2)Br_(9) heterojunction photodetector with excellent photodetection performance by electrochemical depositing NiOx as the hole transport layer.The optimized NiO_(x)/CsaBi_(2)Brg heterojunction photodetector exhibits excellent ultraviolet detection performance with a fast response speed of 3.04/4.65 ms,wide linear dynamic range of 116.6 dB,decent responsivity of 4.33 mA·W^(-1) at 0 V bias,and high detectivity of 1.3×10^(11) jones.The outstanding performance of the optimized NiO_(x)/Cs_(3)Bi_(2)Br_(9) heterojunction photodetector is enough to meet the high-quality ultraviolet imaging.Therefore,we further integrated the optimized NiO_(x)/Cs_(3)Bi_(2)Br_(9) heterojunction photodetector to the transmission mode ultraviolet multispectral imaging system,achieving admirable imaging results at weak light condition.This work will play a positive role in promoting the development of bismuth-based ultraviolet photodetection and ultraviolet multispectral imaging.

关键词： bismuth perovskites heterojunction photodetectors multispectral imaging