Synthesis of SiC Whiskers from Silicon Nitride in Argon Atmosphere

作     者：ZHANG Ying JIANG Mingxue ZHANG Junzhan CUI Xiwen 

作者机构：School of Materials Science and Engineering Xi＇an University of Architecture and Technology Xi＇an 710055 China 

出 版 物：《China's Refractories》 (中国耐火材料（英文版）)

年 卷 期：2009年第18卷第1期

页      面：21-25页

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Silicon carbide whiskers Silicon nitride Growth mechanism 

摘      要：SiC whiskers were synthesized by carbothermal reduction of silicon nitride, α-Si3N4 and β-Si3N4 powders were used as silicon sources, and graphite, active carbon and black carbon as carbon sources, as well as boron oxide as catalyst. The synthesized SiC whiskers were characterized by XRD and SEM. The results showed that the synthesizing temperature should be above 1716 K; the decomposition of Si3N4 was the limited step in the synthesis of SiC whiskers; and catalyst not only offered the liquid condition, but also restricted the growth of SiC whiskers along one dimension. LS mechanism seems to explain well the growth of SiC whiskers.