Diode Stack End-Pumped Nd:GdVO4 Continuous Wave Slab Laser
Diode Stack End-Pumped Nd:GdVO4 Continuous Wave Slab Laser作者机构:EdgeWave GmbH Steinbachstr. 15 52074 Aachen Germany State Key Laboratory of Crystal Materials and Institute of Crystal Materials Shandong University Jinan 250100
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2005年第22卷第9期
页 面:2276-2277页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:Supported by the National Natural Science Foundation under Grant No 90201017 and the Excellent Young Teachers Programme of the Ministry of Education of China
主 题:PERFORMANCE CRYSTAL OUTPUT
摘 要:We report a diode stack end-pumped Nd:GdV04 slab laser with a near-diffraction-limited beam. The output power of 45.8 W at 1064nm is obtained under the pumping power of 147 W, with the optical-optical conversion efficiency of 31.2%, and the slope efficiency is 39.6%.