Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals

作     者：王梦瑶 

作者机构：School of Information Science & TechnologyLaboratory of Optical CommunicationsSouthwest Jiaotong University 

出 版 物：《High Technology Letters》 (高技术通讯（英文版）)

年 卷 期：2009年第15卷第3期

页      面：315-318页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(No.10174057 90201011) the Key Project of Chinese Ministry of Education(No.2005-105148) the Research Fund for the Doctoral Program of Higher Education of China(No.20070613058) 

主　　题：ferroelectric liquid crystal (FLC) thresholdless switching V-shaped circuit model hysteresis inversion frequency 

摘      要：The V-shaped electro-optical properties control is investigated by an equivalent circuit ***-lation results show that genuine V-shaped form is only observed at hysteresis inversion frequency,and be-low and above this frequency an anomalous and normal hysteresis are *** the inversion fre-quency decreases with the resistance of ferroelectric liquid crystal(FLC)layer following logf_i=-alogR_(LC)+b .The results are in good accordance with the reported experimental results.