Characteristics of vertical double-gate dual-strained-channel MOSFETs

作     者：高勇 杨婧 杨媛 刘静 

作者机构：Department of Electronic EngineeringXi'an University of Technology Department of Electronic EngineeringXi’an University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第6期

页      面：51-56页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the (Xi’an) Innovation Foundation for Applied Materials of USA (No.XA-AM-2008070) the Education Bureau of Shannxi Province (No. 08JK384) 

主　　题：vertical double-gate dual-strained-channel 

摘      要：A novel device structure with a vertical double-gate and dual-strained channel is *** electrical characteristics of this device with a gate length of 100 nm are *** a Ge content of 20%,the drain currents of the strained-Si NMOSFET and the strained-SiGe PMOSFET compared to the universal SOI MOSFETs are enhanced by 26% and 33%,respectively;the risetime and the falltime of the strained-channel CMOS are greatly decreased by 50% and 25.47% compared to their traditional Si channel *** simulation results show that the vertical double-gate（DG） dual-strained-channel MOSFETs exhibit better drive capability,a higher transconductance,and a faster circuit speed for CMOS compared to conventional-Si *** new structure can be achieved by today＇s semiconductor manufacturing level.