Far Infrared Optical Properties of Bulk Wurtzite Zinc Oxide Semiconductor

作     者：Pohkok Ooi Saicheong Lee Shashiong Ng Zainuriah Hassan Haslan Abu Hassan 

作者机构：Nano-Optoelectronics Research and Technology LaboratorySchool of Physics Universiti Sains Malaysia 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2011年第27卷第5期

页      面：465-470页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Ministry of Higher Education Malaysia Fundamental Research Grant Scheme(FRGS  Grant No. 203/PFIZIK/6711127) 

主　　题：Zinc oxide Far infrared Polarization Infrared reflectance 

摘      要：Polarized far infrared （FIR） reflectance technique was applied to study the optical properties of a bulk wurtzite zinc oxide （ZnO） single crystal. Room temperature polarized FIR reflectance spectra were taken at various angles of incidence, from 20°to 70°. The theoretical polarized FIR reflectance spectra were simulated based on the anisotropic dielectric function model. Good agreement was achieved between the experimental and the theoretical FIR reflectance spectra. Through this work, a complete set of reststrahlen parameters of a bulk wurtzite ZnO at the Brillouin zone centre was obtained. Additionally, other FIR optical properties such as the real and the imaginary parts of the complex dielectric function, real and imaginary parts of the refractive index, the absorption coefficient and the reciprocal of the absorption coefficient were also obtained by using numerical calculation.