Feature of Polysilane (UV Light Sensitive Materials)Treated by O_2-plasma

作     者：XIEMaonong FUHejian 等 

作者机构：Dept.ofPhysicsSichuanUniversityChengdu610064CHN Dept.ofChemistrySichuanUniversityChengdu610064CH 

出 版 物：《Semiconductor Photonics and Technology》 (半导体光子学与技术（英文版）)

年 卷 期：1998年第4卷第4期

页      面：235-237,242页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Flat Band Voltage O 2 plasma Polysilane 

摘      要：From the analysis of infrared (IR) transmission spectrum, it was showed that the SiO x films were produced when polymethyl phenethyl silane (PMPES) was treated with O 2 plasma, where the x ranged from 1.5 to 2. This film has a positive flat band voltage on the curve of high frequency C V chart, its value is dependent on the condition of O 2 plasma treatment and the thickness of PMPES film.