Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

作     者：SHI Wanquan HOU Qingrun LIU Xuejun LIU Shixiang FU Zhengqing LU Liwu LI Yuanjing 

作者机构：Department of PhysicsGraduate SchoolAcademia SinicaBeijing 100039 Institute of semiconductorsAcademia SinicaBeijing 100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1992年第9卷第9期

页      面：475-478页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China 

主　　题：breakdown DLTS diffusion 

摘      要：We have studied the light induced rapid thermal diffusion of boron atom in *** samples were heated by the rapid thermal *** have carried out spreading resistance and deep level transient spectroscopy(DLTS)*** impurity distribution profile is much shallower and steeper than that of conventional thermal diffusion and the diffusion depth can be con-trolled to 0.1μ*** peaks in the deep level transient spectra were detected and the density of these defects ranges from 0.5 × 10^(12) to 5.6 × 10^(12)/cm^(3).The passivation and annihilation of these defects have been *** have also made the planar diode whose diameter is 500μ*** reverse current and the back breakdown voltage of the planar diode are 10^(-9) A and 80V respectively.