Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition

作     者：Yi Zhu Xingyou Chen Yingjie Ma Yonggang Zhang Ben Du Yanhui Shi Yi Gu 

作者机构：State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Shanghai 200050 China University of Chinese Academy of Sciences Beijing 100049 China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第8期

页      面：36-40页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080503[工学-材料加工工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Key R&D Program of China(Nos.2017YFB0405300,2016YFB0402400) the National Natural Science Foundation of China(Nos.61775228,61675225,61605232) 

主　　题：silicon nitride ICPCVD X-ray photoelectron spectroscopy Raman 

摘      要：The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different NH3flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3flow rates. By optimization, when the NH3flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3flow rate. It is found that amorphous silicon is dominant in the samples with low NH3flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0to Si+4as the NH3flow rate increases.