Silicon-graphene photonic devices

作     者：Yanlong Yin Jiang Li Yang Xu Hon Ki Tsang Daoxin Dai 

作者机构：Centre for Optical and Electromagnetic ResearchState Key Laboratory for Modern Optical InstrumentationZhejiang University College of Information Science and Electronic EngineeringZhejiang University Department of Electronic EngineeringThe Chinese University of Hong Kong 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第6期

页      面：104-111页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Major Research and Development Program(No.2016YFB0402502) the National Natural Science Foundation of China(Nos.11374263,61422510,61431166001,61474099,61674127) the National Key Research and Development Program(No.2016YFA0200200) 

主　　题：silicon graphene thermo-optic all-optic photodetector 

摘      要：Silicon photonics has attracted much attention because of the advantages of CMOS （complementary- metal-oxide-semiconductor） compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been re- garded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning.