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Design of thermo-optic Variable optical Attenuator Based on Quartz Substrate

optics and Photonics Journal 2013年第2期3卷 158-161页

作者： Hongqing Dai Junming An Liangliang Wang Yue Wang Liyao Zhang Jiashun Zhang Hongjie Wang Pan Pan Xiaoguang Zhang Ruidan Liu Jianguang Li Yuanda Wu Xiongwei Hu 1Institute of Semiconductors Chinese Academy of Sciences Beijing China 2Henan Shijia Photons Technology Co. Ltd Hebi China Institute of Semiconductors Chinese Academy of Sciences Beijing China

In this paper, we designed a thermo-optic variable optical attenuator (VOA) based on quartz substrate, which consists of a Mach-Zehnder interferometer (MZI) and a thin film heater above the phase-modulation arm. The transmission properties of the waveguide and attenuation characteristics of the device have been simulated by beam propagation method (BPM), and the simulated results illustrated that the designed VOA had good performance.

关键词： VOA MZI thermo-optic Quartz Substrate

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Silicon-graphene photonic devices

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Journal of Semiconductors 2018年第6期39卷 104-111页

作者： Yanlong Yin Jiang Li Yang Xu Hon Ki Tsang Daoxin Dai Centre for optical and Electromagnetic Research State Key Laboratory for Modern Optical InstrumentationZhejiang University College of Information Science and Electronic Engineering Zhejiang University Department of Electronic Engineering The Chinese University of Hong Kong

Silicon photonics has attracted much attention because of the advantages of CMOS （complementary- metal-oxide-semiconductor） compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been re- garded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning.

关键词： silicon graphene thermo-optic all-optic photodetector

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Thermal analysis for fast thermal-response Si waveguide wrapped by SiN

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Frontiers of Optoelectronics 2012年第1期5卷 73-77页

作者： Rui MIN Ruiqiang JI Lin YANG Optoelectronic System Laboratory Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

A new type of Si waveguide wrapped by silicon nitride （SIN） is designed, and its optical and thermal analysis are presented. The thickness of SiN up-cladding should be larger than 1 pm in order to prevent the absorption of optical field by metal heater. Thermal response of the proposed waveguide structure is enhanced by the high thermal conductivity of SiN. Moreover, this thermal response can be further improved by a fast heat dissipation channel created in this structure. Our simula- tion results indicate that a rise time of about 110 ns can be achieved for the proposed waveguide structure, which is about two orders of magnitude less than that of the conventional Si waveguide. The influences of the thickness of up-cladding and the stretching width and etching depth on the thermal performance are also discussed. The simulation shows thin up-cladding, large stretching width and etching depth are critical to enhance the thermal response speed.

关键词： thermo-optic SiN Si waveguide rise time

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