Improvement of mobility edge model by using new density of states with exponential tail for organic diode

作     者：Muhammad Ammar Khan 孙久勋 Muhammad Ammar Khan;Sun Jiu-Xun

作者机构：School of Physical Electronics University of Electronic Science and Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第4期

页      面：360-365页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.31470822) 

主　　题：organic diode potential barriers Einstein relationship 

摘      要：The mobility edge （ME） model with single Gaussian density of states （DOS） is simplified based on the recent exper- imental results about the Einstein relationship. The free holes are treated as being non-degenerate, and the trapped holes are dealt with as being degenerate. This enables the integral for the trapped holes to be easily realized in a program. The J-V curves are obtained through solving drift-diffusion equations. When this model is applied to four organic diodes, an obvious deviation between theoretical curves and experimental data is observed. In order to solve this problem, a new DOS with exponential tall is proposed. The results show that the consistence between J-V curves and experimental data based on a new DOS is far better than that based on the Gaussian DOS. The variation of extracted mobility with temperature can be well described by the Arrhenius relationship.