Quantum Confinement in GaAs Microcrystallites Embedded in SiO_(2) Thin Film

作     者：SHI Wang-zhou LIN Kui-xun LIN Xuan-ying QI Zhen-zhong 

作者机构：Institute of Material ScienceShantou UniversityShantou 515063 Centre of Information StorageShanghai Jiaotong UniversityShanghai 200030 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1996年第13卷第10期

页      面：797-800页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

主　　题：technique. Quantum Embedded 

摘      要：Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering *** of the thin films were characterized by transmission electron microscopy,x-ray diffraction and x-ray photoelectron *** size of microcrystallites,depending on the substrate temperature during deposition,is *** spectra of the films were *** shift of absorption edge was observed and discussed according to quantum confinement effect.