Theoretical and Experimental Studies of Schottky Diodes that Use Aligned Arrays of Single-Walled Carbon Nanotubes

作     者：Xinning Ho Lina Ye Slava V.Rotkin Xu Xie Frank Du Simon Dunham Jana Zaumseil John A.Rogers 

作者机构：Department of Materials Science and EngineeringBeckman Instituteand Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign1304 West Green StreetUrbanaIllinois 61801USA Department of ChemistryUniversity of Science and Technology of ChinaHefei 230026China Department of PhysicsLehigh UniversityBethlehemPennsylvania 18015 and Centre for Advanced Materials and NanotechnologyLehigh UniversityBethlehemPennsylvania 18015USA Center for Nanoscale MaterialsArgonne National LaboratoryArgonneIllinois 60439USA Department of ChemistryUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA Department of Electrical and Computer EngineeringMechanical Science and EngineeringUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2010年第3卷第6期

页      面：444-451页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：We thank T.Banks and B.Sankaran for help with processing.This work was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities University of Illinois which are partially sup-ported by the U.S.Department of Energy under Grants Nos.DE-FG02-07ER46453 and DE-FG02-07ER46471.X.H.acknowledges fellowship support from A*STAR(Singapore) 

主　　题：Schottky diodes aligned arrays single-walled carbon nanotubes 

摘      要：We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm.