Interfacial Properties of a-Si:H/a-SiN_(x):H Multilayers Studied by electroabsorption Spectroscopy

作     者：LIU Xiangna ZHAO zhouying WANG Yong LI Wenkai 

作者机构：Department of PhysicsNanjing UniversityNanjing 210008 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1991年第8卷第7期

页      面：364-367页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Supported partly by the National Natural Science Foundation of China 

主　　题：primarily explain asymmetric 

摘      要：By using electroabsorption method,we find that the built-in field(~10^(5) V·cm^(-1))in the a-Si sublayers of a-Si:H/a-SiN_(x):H multilayers points towards the sample *** ascribe the internal field to the asymmetric distribution of defect states which exist primarily in the silicon side of the silicon-on-nitride interfaces,owing to the large repellent lattice stress *** also find that the built-in potential depends strongly on x,with a maximum value near x=*** intend to explain it as a result of structural softening as more N atoms are introduced into Si networks in the range of x1.0.