Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films

作     者：Weiwei Cai Richard D.Piner Yanwu Zhu Xuesong Li Zhenbing Tan Herman Carlo Floresca Changli Yang Li Lu M.J.Kim Rodney S.Ruoff 

作者机构：Department of Mechanical Engineering and the Texas Materials InstituteUniversity of Texas at AustinAustinTX 78712USA Institute of PhysicsChinese Academy of SciencesBeijing 100190China Department of Materials Science and EngineeringUniversity of Texas at DallasRichardsonTX 75083USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2009年第2卷第11期

页      面：851-856页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by The University of Texas at Austin and by the Texas Nanotechnology Research Superiority Initiative Southwest Nanotechnology Institute(TNRSI)/SWAN 

主　　题：Chemical vapor deposition(CVD) isotopically-labeled graphite graphene 

摘      要：We report the synthesis of isotopically-labeled graphite films on nickel substrates by using cold-wall chemical vapor deposition(CVD).During the synthesis,carbon from^(12)C-and^(13)C-methane was deposited on,and dissolved in,a nickel foil at high temperature,and a uniform graphite film was segregated from the nickel surface by cooling the sample to room *** and transmission electron microscopy,micro-Raman spectroscopy,and X-ray diffraction prove the presence of a graphite *** graphene films obtained from such isotopically-labeled graphite films by mechanical methods have electron mobility values greater than 5000 cm^(2)·V^(-1)·s^(-1)at low ***,such films exhibit the half-integer quantum Hall effect over a wide temperature range from 2 K to 200 K,implying that the graphite grown by this cold-wall CVD approach has a quality as high as highly oriented pyrolytic graphite(HOPG).The results from transport measurements indicate that^(13)C-labeling does not significantly affect the electrical transport properties of graphene.