Influence of Annealing on Crystal Structure and Properties of SrBi_(2)Ta_(2)O_(9) Thin Films Prepared by Pulse Laser Deposition

作     者：YANG Ping-xiong ZHENG Li-rong WANG Lian-wei LIN Cheng-lu 

作者机构：State Key Laboratory of Functional Materials for InformationShanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1996年第13卷第12期

页      面：934-936页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

主　　题：ferroelectric annealing film 

摘      要：The perovskite-like SrBi_(2)Ta_(2)O_(9)(SBT)thin films have been fabricated on Si/SiO_(2)/Ti/Pt substrate by pulse laser *** crystallization and ferroelectric property were clearly dependent on the annealing time and *** SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750℃ for *** ferroelectric properties were obtained from the SBT film annealed under this condition;Pr and Ec were 8.4μC/cm^(2) and 57kV/cm,respectively.