Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process

作     者：Zhao-fan Liu Wei Xia Chen-chen Yuan Pai-feng Luo 

作者机构：Department of Materials Science and Engineering Hefei University of Technology Hefei 230009China CAS Key Laboratory of Materials for Energy Conversion University of Science and Technology of China Hefei 230026 China 

出 版 物：《Chinese Journal of Chemical Physics》 (化学物理学报（英文）)

年 卷 期：2015年第28卷第6期

页      面：-页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was financially supported by the National Natural Science Foundation of China the Natural Science Foundation of Anhui Province the Opening Project of CAS Key Laboratory of Materials for Energy Conversion at University of Science and Technology of China 

主　　题：Non-vacuum Solvothermal X-ray diffraction Sulfuration 

摘      要：Cu(In,Al)(Se,S)2 thin films were successfully obtained through a simple low-cost non-vacuum process. The Cu(In,Al)Se2 raw material powder was firstly synthesized by a traditional solvothermal route. Then, the precursor coatings were prepared by drop-coating Cu(In, Al)Se2 slurry. Finally, the Cu(In,Al)Se2 and Cu(In,Al)(Se,S)2 films were achieved by the selenization and/or sulfuration process. Through X-ray diffraction (XRD), scanning electron microscope, X-ray fluorescence, and absorption spectroscopy measurement, it was found that all the films show the single chalcopyrite phase structure and have the preferred (112) orientation. Meanwhile, after substituting selenium by sulfur, the main XRD peaks shift to higher 2θ degrees and the porous films become more compact. The energy band gap also increases to a suitable range for light absorption from 1.21 eV to 1.33 eV, which indicates that the additional sulfuration process is much more favorable for improving the quality of Cu(In,Al)(Se,S)2 films.