Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO_(2)

作     者：LIN Xuan-ying LIN Kui-xun YAO Ruo-he SHI Wang-zhou LI Mei-ya YU Chu-ying YU Yun-peng LIANG Hou-yun XU Yan-ping 林璇英;林揆训;姚若河;石旺舟;李美亚;徐楚迎;余运鹏;傑厚蕴;徐严平

作者机构：Department of PhysicsShantou UniversityShantou 515063 Institute of Material Science and TechnologyShantou UniversityShantou 515063 Test CenterShantou UniversityShantou 515063 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1999年第16卷第9期

页      面：670-671页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China under Grant No.19475027 Natural Science Foundation of China under Grant No.950822 

主　　题：temperature. surface. crystalline 

摘      要：Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room *** energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were *** photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized *** silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.