Thermoelectric performance enhancement of(BiS)1.2(TiS2)2 misfit layer sulfide by chromium doping
作者机构:Graduate School of EngineeringNagoya UniversityNagoya 464-8603Japan CRESTJapan Science and Technology AgencyTokyo 102-0075Japan Department of PhysicsState Key Laboratory of Photoelectric Technology and Functional Materials(Culture Base)Northwest UniversityXi’an 710069China National Institute for Materials Science(NIMS)Tsukuba 305-0044Japan
出 版 物:《Journal of Advanced Ceramics》 (先进陶瓷(英文))
年 卷 期:2013年第2卷第1期
页 面:42-48页
核心收录:
学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
主 题:thermoelectric misfit layer sulfide spark plasma sintering electrical conductivity thermal conductivity
摘 要:A misfit layer sulfide(BiS)_(1.2)(TiS_(2))_(2) with a natural superlattice structure has been shown to be a promising thermoelectric material,but its high carrier concentration should be reduced so as to further optimize the thermoelectric ***,ordinary acceptor doping has not succeeded because of the non-parabolic band *** this paper,we have successfully doped chromium ions into the Ti sites,which can maintain or even enhance the high effective mass of electrons so as to effectively improve ZT value.X-ray diffraction analysis,coupled with X-ray photoelectron spectroscopy,shows that chromium has been substituted into titanium sites in TiS2 layers and confirms its ionic *** chromium doping has successfully reduced the carrier concentration with the subsequent reduction of electrical *** other acceptor dopants(alkaline earth metals),chromium also enhances Seebeck coefficient and the effective mass,which can possibly be attributed to the formation of additional resonant states near Fermi *** the power factor does not improve,the significant reduction in the electronic part of the thermal conductivity leads to a measurable improvement in ZT.