Effect of the post-annealing temperature on the thermal-decomposed NiO_(x) hole contact layer for perovskite solar cells

作     者：Yuxiao Guo Xingtian Yin Jie Liu Wei Chen Sen Wen Meidan Que Yapeng Tian Yawei Yang Wenxiu Que 

作者机构：Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shaanxi Engineering Research Center of Advanced Energy Materials and Devices Xi’an Jiaotong University Xi’an 710049ShaanxiP.R.China 

出 版 物：《Journal of Advanced Dielectrics》 (先进电介质学报（英文）)

年 卷 期：2018年第8卷第1期

页      面：50-55页

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0817[工学-化学工程与技术] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：funded by the National Natural Science Foundation of China(51502239) China Postdoctoral Science Foundation(2017T100751) Natural Science Basic Research Plan in Shaanxi Province of China(2016JQ6058) Postdoctoral Science Foundation in Shaanxi Province of China and the 111 Project of China(B14040) 

主　　题：NiO_(x) hole transport layer thermally decomposing annealing temperature perovskite solar cell 

摘      要：A hysteresis-less inverted perovskite solar cell(PSC)with power conversion efficiency(PCE)of 13.57%was successfully achieved based on the thermal-decomposed NiO_(x) hole contact layer,possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge ***,the transparent and high-crystalline NiO_(x) film is prepared by thermal-decomposing of the solution-derived Ni(OH)_(2) film in our study,which is then employed as hole transport layer(HTL)of the organic–inorganic hybrid ***,the post-annealing treatment,especially for the annealing temperature,could greatly affect the Ni(OH)_(2) decomposition process and the quality of decomposed NiO_(x) *** vital NiO_(x) HTLs with discrepant morphology,crystallinity and transmission certainly lead to a wide range of device *** a result,an annealing process of 400℃/2 h significantly promotes the photovoltaic properties of the NiO_(x) layer and the further device performance.