Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal(100) GaAs and(001) Si Substrate Fabricated by Pulsed Laser Deposition

作     者：Y.Zhang M.Turghun C.J.Huang T.Wang F.F.Wang W.Z.Shi 

作者机构：Key Laboratory of Optoelectronic Material and DeviceShanghai Normal University Mathematics and Science CollegeShanghai Normal University 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2018年第31卷第6期

页      面：623-628页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financially supported by the National Youth Natural Science Foundation (nos. 61601293 and 61404085) the Yangfan Plan of Shanghai Youth Science and Technology Talents (no. 15YF408800) the National Natural Science Foundation of China (nos. 11574214, 61376010) 

主　　题：Magnetostrictive film Soft magnetic film Texture Galfenol 

摘      要：FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition *** structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs *** coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy ***,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.