NOVEL SEMICONDUCTOR SUBSTRATE FORMED BY HYDROGEN ION IMPLANTATION INTO SILICON

作     者：LI Jianming 李建明

作者机构：Institute of SemiconductorsAcademia SinicaBeijing 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1989年第6卷第10期

页      面：458-460页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：implantation realization beneath 

摘      要：A high resistivity layer formed beneath the silicon surface by using protons implantation and two-step annealing is *** shows that the surface Hall mobility of top layer has increased by 26%・This novel substrate challenges to GaAs(advantages of speed)and opens a new road for the realization of very high speed integrated circuits.