Photo- and Electro-Luminescence at 1.54µm from Er^(3+) in SiC:Er_(2)O_(3) Films and Structures

作     者：YIN Yang RAN Guang-Zhao ZHANG Bin QIN Guo-Gang 尹扬;冉广照;张斌;秦国刚

作者机构：School of Physics and the State Key Laboratory for Mesoscopic PhysicsPeking UniversityBeijing 100871 Institute of Modern PhysicsFudan UniversityShanghai 200433 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2011年第28卷第7期

页      面：282-285页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：by the National Natural Science Foundation of China under Grant Nos 10874011,50732001 and 60877022 the National Basic Research Program of China under Grant No 2007CB613401 

主　　题：(3) excitation films 

摘      要：SiC:Er_(2)O_(3) films with different ratios of SiC to SiC:Er_(2)O_(3) are deposited on p−type Si substrates by the magnetron co-sputtering technique,which was fully compatible with current Si processing *** room temperature 1.54µm photoluminescence(PL)from Er3+ions in the SiC:Er_(2)O_(3) films is observed and the PL intensity at 1.54µm is enhanced by about 40 times with increasing Er concentration in the films from 0.8 to 22 at.%under both direct and indirect *** 1.54µm electroluminescence from the structure of indium tin oxide(ITO)/n+−Si/SiC:Er_(2)O_(3)/p−Si with suitable ratios of SiC to SiC:Er_(2)O_(3)is measured under forward biases.