Field Effect Transistor with Self-Organized In_(0.15)Ga_(0.85)As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates

作     者：LI Xian-Jie YAN Fa-Wang ZHANG Wen-Jun ZHANG Rong-Gui LIU Wei-Ji AO Jin-Ping ZENG Qing-Ming LIU Shi-Yong LIANG Chun-Guang 李献杰;闫发旺;张文俊;张荣桂;刘伟吉;敖金平;曾庆明;刘式墉;梁春广

作者机构：Hebei Semiconductor Research InstituteShijiazhuang 050051 Department of Electronic EngineeringJilin UniversityChangchun 130023 Department of Electrical and Electronic EngineeringTokushima UniversityTokushima 770-8506Japan 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2001年第18卷第8期

页      面：1147-1149页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：drain channel polarization 

摘      要：A functional field effect transistor with self-organized In_(0.15)Ga_(0.85)As/GaAs quantum wires(QWRs)as a channel was achieved by molecular beam epitaxy on a(553)B GaAs *** the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR *** device with a gate-length of 2μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room *** saturated drain current is as high as 5.6 *** device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel *** addition,the effective gate width was discussed in comparison with the geometric gate width of the device,from which a larger maximum transconductance of 130 mS/mm could be estimated.