Epitaxial Growth of Bi_(2)Sr_(2-x)LaxCu_(1)O_(6+δ) Thin Films by In-Situ dc Magnetron Sputtering

作     者：ZHANG Ying-zi YANG Duo-gui LI Lin ZHAO Bai-ru JIA Shun-lian CHEN Hong WU Fei CHE Guang-can ZHAO Zhong-xian 张鹰子;杨多贵;李林;赵柏儒;贾顺连;陈红;吴非;车广灿;赵忠贤

作者机构：National Laboratory for SuperconductivityInstitute of Physics&Centre for Condensed Matter PhysicsChinese Academy of SciencesBeijing 100080 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1998年第15卷第5期

页      面：373-375页

核心收录：

学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 0702[理学-物理学] 

主　　题：process. substitution perpendicular 

摘      要：Bi_(2)Sr_(2-x)LaxCu_(1)O_(6+δ)(La-2201)thin films were successfully prepared on(100)SrTiO_(3) and(100)LaAIO_(3) substrates by in-situ dc-magnetron sputtering process.A series compensated 2201 targets of La^(3+)substitution contents for Sr^(2+)were studied for growing 2201 phase thin *** superconducting zero resistance temperature T_(c,0) reached 19K.X-ray diffraction analyses showed that films oriented with c-axis perpendicular to the substrate surface and their lattice parameters are around 2.43-2.46nm.Ф-scan and rocking curve show a good epitaxial growth and crystallisation of the films.