Enhancement of Band Edge Emission from ZnS/Zn(OH)_(2) Quantum Dots

作     者：Hatim Mohamed El-Khair XU Ling HUANG Xin-Fan LI Ming-Hai CHEN Kun-Ji Hatim Mohamed El-Khair;徐岭;黄信凡;李明海;陈坤基

作者机构：National Laboratory of Solid State Microstructures and Department of PhysicsNanjing UniversityNanjing 210093 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2001年第18卷第4期

页      面：616-618页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No.69890225 

主　　题：hence surfactant inorganic 

摘      要：ZnS and Zn(OH)_(2) capped ZnS semiconductor quantum dots(QDs)have been synthesized by the colloidal chemical method using inorganic *** electron microscopy and electron diffraction results showed that the monodispersed ZnS QDs have 1 to 5 nm in diameter and the wurtzite *** polarities of the precursors and surfactant solvents have shown strong effects on the properties of the photoluminescence for ZnS *** ZnS QDs capped with a wider band gap Zn(OH)_(2) shell,the surface trap states were passivated and hence the band-edge emissions have been enhanced.