Energy Density Dependence of Bonding Characteristics of Selective Laser-Melted Nb–Si-Based Alloy on Titanium Substrate

作     者：Yue-Ling Guo Li-Na Jia Bin Kong Yong-Lin Huang Hu Zhang 

作者机构：School of Materials Science and Engineering Beihang University 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2018年第31卷第5期

页      面：477-486页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported financially by the National Natural Science Foundation of China (Nos. 51471013 and 51571004) 

主　　题：Nb-Si alloys Selective laser melting Additive manufacture Bonding character Microstructure 

摘      要：Spherical Nb–20Si–24Ti–2Cr–2Al pre-alloyed powders were processed by selective laser melting（SLM） on Ti6Al4V substrates with different energy densities. A series of single tracks and single layers were produced using different processing parameters, including powder size, laser power, scanning speed and hatch distance. Results showed that the pre-alloyed powders ranging from 45 to 75 lm were more applicable to SLM with less balling tendency, in comparison with those between 75 and 180 lm. The increase in linear energy density（LED） resulted in the decrease in contact angle and the increase in the width of single track as well as its penetration depth into the substrate. Smaller hatch distance leaded to a larger remelted part of the former track and a higher volumetric laser energy density. With a thickness of 75.6 lm, an interfacial intermediate layer, enriched in Ti and depleted in Nb, Si, Cr and Al, was formed between the SLM part and the Ti6Al4V substrate. The mechanisms of the elimination of balling phenomenon by employing a higher LED and the interfacial bonding characteristics between Nb–Si-based alloys via SLM and the Ti6Al4V substrate were discussed.