Compositional dependence of Raman frequencies in Si_xGe_(1-x) alloys

作     者：郑文礼 李廷会 

作者机构：College of Electronic EngineeringGuangxi Normal University Department of PhysicsChengde Teacher's College for Nationalities 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第11期

页      面：1-5页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.10847004 61264008) 

主　　题：Raman spectroscopy Si_xGe_(1 x) nanocrystals DFT calculation 

摘      要：Increases in Si content and the calculated Raman spectra acquired from the Si_xGe_（1-x） alloys reveal that the frequencies of the Ge-Si and Si-Si modes are up-shifted obviously,meanwhile that of the Ge-Ge optical mode is down-shifted,which is strongly dependent on their microstructural *** linear decrease and increase caused by their force constant（bond lengths and bond angles） changes,which can be used as a fingerprint to identify the average Si *** complex microstructural changes induced by increasing Si content can be clearly displayed by Raman spectra transformation.