Lateral polarity control ofⅢ-nitride thin film and application in GaN Schottky barrier diode

作     者：Junmei Li Wei Guo Moheb Sheikhi Hongwei Li Baoxue Bo Jichun Ye 

作者机构：Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China Changchun University of Science and TechnologyNational Key Lab of High Power Semiconductor LasersChangchun 130022China Advanced Micro-Fabrication Equipment Inc.Shanghai 201201China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第5期

页      面：21-25页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project partially supported by the National Key Research and Development Program of China(No.2016YFB0400802) the National Natural Science Foundation of China(No.61704176) the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications(No.ZJUAMIS1704) 

主　　题：polarity Ⅲ nitride biaxial strain Schottky barrier diode 

摘      要：N-polar and Ⅲ-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was *** morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains,*** influence of N-polarity on on-state resistivity and Ⅰ–Ⅴ characteristic was discussed,demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices.