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The oscillations in ESR spectra of Hg_(0.76)Cd_(0.24)Te implanted by Ag^+ at the X and Q-bands

The oscillations in ESR spectra of Hg_(0.76)Cd_(0.24)Te implanted by Ag^+ at the X and Q-bands

作     者:A.V.Shestakov I.I.Fazlizhanov I.V.Yatsyk I.F.Gilmutdinov M.I.Ibragimova V.A.Shustov R.M.Eremina 

作者机构:Zavoisky Physical-Technical Institute Federal Research Center "Kazan Scientific Center of RAS" Physics Institute Kazan (Volga Region) Federal University 

出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))

年 卷 期:2018年第39卷第5期

页      面:1-5页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主  题:de Haas–van Alphen effect AgHg0.76Cd0.24Te magnetic resonance 

摘      要:The objects of the investigation were uniformly Ag~+ doped Hg_(0.76)Cd_(0.24) Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 10^(16) cm^(-3) to p-type with carrier concentration of ≈ 3.9 × 10^(15) cm^(-3). The investigations of microwave absorption derivative(d P/d H) showed the existence of strong oscillations in the magnetic field for Ag:Hg_(0.76)Cd_(0.24) Te in the temperature range 4.2–12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas–van Alphen effect in weakly correlated electron system with imperfect nesting vector.

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