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[Y(dbm)_(3)(H_(2)O)]:Synthesis,thermal behavior and spin-coating precursor for Y_(2)O_(3)layer formation

[Y(dbm)3(H2O)]:Synthesis, thermal behavior and spin-coating precursor for Y2O3 layer formation

作     者:Elaheh Pousaneh Andrea Preuβ Khaybar Assim Julian Noll Alexander Jakob Tobias Rüffer Heinrich Lang 

作者机构:Technische Universitat ChemnitzFaculty of Natural SciencesInstitute of ChemistryInorganic Chemistry 

出 版 物:《Journal of Rare Earths》 (稀土学报(英文版))

年 卷 期:2017年第35卷第12期

页      面:1248-1254页

核心收录:

学科分类:0709[理学-地质学] 0819[工学-矿业工程] 07[理学] 070304[理学-物理化学(含∶化学物理)] 0708[理学-地球物理学] 0703[理学-化学] 

基  金:Project supported by the German Research Foundation(Cluster of Excellence Center for Advancing Electronics Dresden(cfaed) partially performed within the Federal Cluster of Excellence EXC 1075 MERGE Technologies for Multifunctional Lightweight Structures 

主  题:Yttrium β-Diketonate Yttrium oxide Spin-coating Solid-state structure Vapor pressure 

摘      要:The synthesis,structure and thermal behavior of [Y(dbm)3(H2 O)](3)(dbm = 1,3-diphenyl-1,3-propandionate) and its use as a spin-coating precursor for Y2 O3 deposition is reported. Complex 3 was prepared by the reaction of [Y(NO3)3·6 H2 O](1) with 3 equiv of Hdbm(2) in presence of NaOH. The molecular structure of 3 in the solid-state was determined by single X-ray crystal diffraction. Both C1 symmetric crystallographically independent species of 3 possess a YO7 coordination setup with minor deviation from an ideal capped octahedron coordination geometry(∧ enantiomer). Complex 3 forms a1 D chain, due to intermolecular hydrogen bonds between the coordinated H2 O molecule and the 0 atom of the dbm ligand, respectively. The thermal decomposition behavior of 3 was investigated by thermogravimetric studies in the temperature range of 40-800 ℃ and 40-1300 ℃ under an oxygen and argon atmosphere, respectively. Powder X-ray diffraction(PXRD) measurements of the residues confirmed the formation of Y2 O3. Complex 3 was applied as a spin-coating precursor for yttrium oxide film formation on either Si wafers with a continuous 100 nm thick SiO2 film, or with a native oxide layer.The as-deposited Y2 O3 layers are smooth, conformal, dense and transparent and are of a thickness of 27 and 30 nm, respectively.

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