Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire
Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire作者机构：Research Center of Nano-Science and Nano-TechnologyShanghai UniversityShanghai 200444China
出 版 物：《Friction》 (摩擦（英文版）)
年 卷 期：2017年第5卷第4期
页 面：429-436页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：the National Natural Science Foundation of China
主 题：chemical mechanical polishing Ag-doped colloidal silica abrasive sapphire material removal rate
摘 要：The chemical mechanical polishing (CMP) process has become a widely accepted global planarization *** abrasive material is one of the key elements in *** the presented paper,an Ag-doped colloidal SiO2 abrasive is synthesized by a seed-induced growth *** is characterized by time-of-flight secondary ion mass spectroscopy and scanning electron microscopy to analyze the composition and *** CMP performance of the Ag-doped colloidal silica abrasives on sapphire substrates is *** results show the material removal rate (MRR) of Ag-doped colloidal silica abrasives is obviously higher than that of pure colloidal silica abrasives under the same testing *** surfaces that are polished by composite colloidal abrasives exhibit lower surface roughness (Ra) than those polished by pure colloidal silica ***,the acting mechanism of Ag-doped colloidal SiO2 composite abrasives in sapphire CMP is analyzed by X-ray photoelectron spectroscopy,and analytical results show that element Ag forms Ag2O which acts as a catalyst to promote the chemical effect in CMP and leads to the increasing of MRR.
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