Co evolutions for WC-Co with different Co contents during pretreatment and HFCVD diamond film growth processes

作     者：Xin-chang WANG Cheng-chuan WANG Wei-kai HE Fang-hong SUN 王新昶;王成川;何为凯;孙方宏

作者机构：State Key Laboratory of Mechanical System and VibrationSchool of Mechanical EngineeringShanghai Jiao Tong UniversityShanghai 200240China School of Physics and TechnologyUniversity of Ji’nanJi’nan 250022China 

出 版 物：《Transactions of Nonferrous Metals Society of China》 (中国有色金属学报（英文版）)

年 卷 期：2018年第28卷第3期

页      面：469-486页

核心收录：

学科分类：0806[工学-冶金工程] 08[工学] 0818[工学-地质资源与地质工程] 0815[工学-水利工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0813[工学-建筑学] 0703[理学-化学] 0814[工学-土木工程] 0702[理学-物理学] 

基　　金：Projects(51275302,51005154)supported by the National Natural Science Foundation of China Project(2015M580327)supported by the China Postdoctoral Science Foundation Project(2016T90370)supported by the China Postdoctoral Science Foundation Special Funded Project 

主　　题：HFCVD diamond film WC-Co Murakami-acid pretreatment Co content Co evolution 

摘      要：Systematical researches were accomplished on WC-Co with different Co contents(6%,10%and 12%,mass fraction).Based on the XPS and EDX,from orthogonal pretreatment experiments,it is indicated that the acid concentration,the time of the acid pretreatment and the original Co content have significant influences on the Co-removal depth(D).Moreover,the specimen temperature,original Co content and Co-removal depth dependences of the Co evolution in nucleation,heating(in pure H2 atmosphere)and growth experiments were discussed,and mechanisms of Co evolutions were summarized,providing sufficient theoretical bases for the deposition of high-quality diamond films on WC-Co substrates,especially Co-rich WC-Co *** is proven that the Co-rich substrate often presents rapid Co *** high substrate temperature can promote the Co diffusion in the pretreated substrate,while acts as a Co-etching process for the untreated *** is finally found that the appropriate Co-removal depth for the WC-12%Co substrate is 8-9μm.