Simulation model for electron irradiated IGZO thin film transistors

作     者：G K Dayananda C Shantharama Rai A Jayarama Hyun Jae Kim 

作者机构：Department of E&C Engineering Canara Engineering College Mangalore 574219 India Department of E&C Engineering AJIET Mangalore 575009 India Department of Physics SCEM Adyar Mangalore 575007 India Yonsei University Seoul 120-749 Republic of Korea 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第2期

页      面：17-21页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：simulation model IGZO TFT electron irradiation 

摘      要：An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.