Photoanode Activity of ZnO Nanotube Based Dye-Sensitized Solar Cells

作     者：R. Ranjusha P. Lekha K.R.V. Subramanian V. Nair Shantikumar A. Balakrishnan 

作者机构：Nano Solar Division Amrita Center for Nanosciences 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2011年第27卷第11期

页      面：961-966页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Department of Science and Technology (DST)  Government of India was gratefully acknowledged for their financial support under the NATAG program monitored by Dr. G. Sundararajan 

主　　题：ZnO nanotubes Indium doped tin oxide (ITO) glass Photoluminescence spectra Electrochemical deposition Quantum efficiency 

摘      要：Vertical ZnO nanotube （ZNT） arrays were synthesized onto an indium doped tin oxide （ITO） glass substrate by a simple electrochemical deposition technique followed by a selective etching process. Scanning electron microscopy （SEM） showed formation of well-faceted hexagonal ZNT arrays spreading uniformly over a large area. X-ray diffraction （XRD） of ZNT layer showed substantially higher intensity for the （0002） diffraction peak, indicating that the ZnO crystallites were well aligned with their c-axis. Profilometer measurements of the ZNT layer showed an average thickness of -7 μm. Diameter size distribution （DSD） analysis showed that ZNTs exhibited a narrow diameter size distribution in the range of 65-120 nm and centered at -75 nm. The photoluminescence （PL） spectrum measurement showed violet and blue luminescence peaks that were centered at 410 and 480 nm, respectively, indicating the presence of internal defects. Ultra-violet （UV） spectroscopy showed major absorbance peak at ,-348 nm, exhibiting an increase in energy gap value of 3.4 eV. By employing the formed ZNTs as the photo-anode for a dye-sensitized solar cell （DSSC）, a full-sun conversion efficiency of 1.01% was achieved with a fill factor of 54%. Quantum efficiency studies showed the maximum of incident photon-to-electron conversion efficiency in a visible region located at 590-550 nm range.