Solid State Synthesis and Thermoelectric Properties of Mg-Si-Ge System

作     者：Renbo SONG Yazheng LIU Tatsuhiko AIZAWA 

作者机构：School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Center for Collaborative Research The University of Tokyo Komaba 4-6-1 Meguro-ku Tokyo 153-8904 Japan 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2005年第21卷第5期

页      面：618-622页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Grand-in-Aid from MEST  Japan with the contract(13852008) 

主　　题：Solid-state synthesis Mg2Si1-xGex Bulk mechanical alloying Thermoelectric Hot pressing 

摘      要：Thermoelectric materials, Mg2Si1-xGex （x=0, 0.2, 0.4, 0.6, 0.8, 1）, have been prepared by bulk mechanical alloying （BMA） and hot pressing （HP）. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured from room temperature up to about 700 K. The electrical conductivity of all the samples increases with increasing temperature, while the Seebeck coefficient and thermal conductivity decrease with increasing temperature. Mg2Si and Mg2Si0.8Ge0.2 possess negative type of conductivity, while for other compounds it is positive. At the same time, the effect of hot processing condition on thermoelectric properties was also investigated. The maximum figure of merit of Mg2Si0.6Ge0.4 was obtained with the processing parameter of BMA at 600 cycles and hot pressing at 773 K and i GPa for i h.