Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

作     者：Shujing Guo Zhongwu Wang Zeyang Xu Shuguang Wang Kunjie Wu Shufeng Chen Zongbo Zhang Caihong Xu Wenfeng Qiu Liqiang Li 

作者机构：Inner Mongolia University of College of Chemistry and Chemical Engineering Hohhot 010021 China Advanced Nano-materials Division Key Laboratory of Nano-Devices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China Laboratory of High-Tech Materials Institute of ChemistryChinese Academy of Sciences Beijing 100190 China 

出 版 物：《Chinese Chemical Letters》 (中国化学快报（英文版）)

年 卷 期：2017年第28卷第11期

页      面：2143-2146页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China (Nos. 21573277, 51503221) National Key Research and Development Program (No. 2016YFA0200700) Key Research Program of Frontier Sciences of Chinese Academy of Sciences (No. QYZDB-SSW-SLH031) Natural Sciences Foundation of Jiangsu Province (No. BK20150368), Natural Science Foundation of Inner Mongolia of China (No. 2014JQ02) 

主　　题：Silica Spin coating Thin film Transistor 

摘      要：Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability, excellent electrical properties, mature preparation process, and good compatibility with organic semiconductors. However, most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum. In this paper, we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route, which possesses a low leakage current, high capacitance, and low surface roughness. The silica thin film can be produced in the condition of low temperature and atmospheric environment. To meet various demands, the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution. The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance. This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving, time-saving and easy to operate.