Evidence of the Precipitates in the V-Shaped Defects of Undoped GaN

作     者：KANG Jun-yong HUANG Qi-sheng OGAWA Tomoya 康俊勇;黄启圣;小川智哉

作者机构：Department of PhysicsXiamen UniversityXiamen 361005 Department of PhysicsGakushuin UniversityMejiroTokyo 171Japan 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1999年第16卷第1期

页      面：47-49页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported in part by the National Natural Science Foundation of China under Grant No.69576022 Natural Science Foundation of Fujian Province the Research Funds of Japan Society for the Future Program on "Atomic Scale Surface and Interface Dynamics" 

主　　题：shape Defects hexagonal 

摘      要：Precipitates in undoped GaN epilayers with specular surfaces grown on sapphire substrates were imaged by super high-resolution electron microscopy(HREM)and analyzed by energy-dispersive x-ray spectrometry(EDXS).The HREM images of the precipitates appeared more or less hexagonal intersection with several ten-nanometer large,which is the same as that of the V-shape *** EDXS spectra of the precipitates were mainly composed of the characteristic x-rays of oxygen,carbon,and gallium *** results suggest that the precipitates nucleate at the pinholes of the V-shape cavities and grow as the GaN growth.