Properties of Boron-Substituted Heterofullerenes

作     者：ZOU Ying LUO Min-xing WANG Zhi-jian LI Wen-zhu 邹鹰;罗民兴;王志坚;李文铸

作者机构：Zhejiang Institute of Modern PhysicsDepartment of PhysicsZhejiang UniversityHangzhou 310027 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1998年第15卷第2期

页      面：106-108页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported in part by the Fund for Returning Scholars and National Doctorate Foundation of China 

主　　题：distortion boron fullerenes 

摘      要：On the basis of a succinct description of geometrical configurations for giant fullerenes,the electronic properties and structural distortions of heterofullerenes C_(N-1)B(N=60,180,240,420,540,720,780)are analyzed by the extended Su-Schrieffer-Heeger *** comparison with their pristine fullerenes CN,local distortions and mid-gap states are found to occur in boron-doped giant fullerenes.