Photoreflectance Study of GaN Films on Sapphire Substrate

作     者：QIN Lin-liong YANG Kai ZHENG You-clou ZHANG Rong DAI Xing-jiang FENG Duan HUANG Zhen-chun J.C.Chen 

作者机构：Department of PhysicsNanjing UniversityNanjing 210093 Department of Electrical EngineeringUniversity of Maryland Baltimore CountyBaltimoreMD 21228-5398USA 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1996年第13卷第2期

页      面：153-156页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：GaN sapphire optical 

摘      要：Photoreflectance was used to study the optical properties of single crystal hexagonal GaN finis on(0001)sapphire substrate grown by metalorganic chemical vapor *** energy gap of GaN was determined as 3.400 eV and the possible origin of the signal was *** absorption and reflection were *** optical absorption edge of 3.38 eV,and the reilectivity peak at 3.3 eV, confirmed the results of photoreiiectance.