Critical Point of Ising Films with Different Growth Directions
作者机构:Department of PhysicsYantai UniversityYantai 264005 Department of PhysicsCapital Normal UniversityBeijing 100037 Department of PhysicsState University of New York at BuffaloBuffaloNY 14260-1500U.S.A.
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2000年第17卷第1期
页 面:55-57页
核心收录:
学科分类:0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
主 题:directions Ising variational
摘 要:The critical temperature Tc of a spin-1/2 Ising film of cubic structures is calculated by the variational cumulant expansion method for three directions of *** results from different growth directions are analysed and compared with each *** the present model,the Tc values depend largely on the number of nearest neighbors in a monolayer for films with the same number of monolayers but grown in different *** sc,bcc and fee structures,the highest Tc is found along the(100),(110),and(111)direction,respectively.