Photoluminescence from Porous-Like SiC and Its Light-Induced Enhancement
作者机构：Department of Applied ElectronicsXian University of TechnologyXi’an 710048 Department of PhysicsHong Kong University of Science and TechnologyHong Kong
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：1999年第16卷第4期
页 面：295-297页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Supported by the National Natural Science Foundation of China under Grant No.69876030 the Research Grant Council of Hong Kong
主 题：temperature. Porous enough
摘 要：Intense photoluminescence(PL)from porous-like SiC has been observed at room *** samples were prepared by electrochemical anodization from nanocrystalline SiC thin films grown on Si(100)substrates in hot filament chemical vapor *** has been found that a light-induced enhancement of the PL intensity will take place if the incident light beam from an He-Cd laser(325nm,10mW)is employed for the ***-shift of the PL peak energy from about 1.9eV of as-anodized samples to about 2.1 eV and an accompanied spectral widening have also been observed for a long enough irradiation ***,the novel effects have not been observed at low *** of the light-induced change is suggested to be related to some light-induced metastable defects.
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