Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films

作     者：HAN Wei-qiang HAN Gao-rong FAN Shou-shan GU Bing-lin 韩伟强;韩高荣;范守善;顾秉林

作者机构：Department of MaterialsZhejiang UniversityHangzhou 310027 Department of PhysicsTsinghua UniversityBeijing 100084 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1997年第14卷第9期

页      面：682-685页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported in part by the National Postdoctoral Foundation of China 

主　　题：crystallization diluted 

摘      要：Hydrogenated nanocrystalline silicon nitrogen(nc-SiN_(x):H)films were prepared by rf glow discharge of gas mixture of silane(SiH_(4))and nitrogen(N_(2))diluted heavily by hydrogen(H_(2)).The effect of the gas volume ratios X_(g) of(SiU_(4)+N_(2))/H_(2) and X_(N)of N_(2)/SiH_(4) on the crystallization and composition of films is *** growth process and crystallization mechanism of nc-SiN_(x):H films are discussed in detail.