Formation Energies and Electronic Structures of Native Defects in GaN

作     者：XIE Jian-jun ZHANG Kai-ming XIE Xi-de 

作者机构：Department of PhysicsFudan UniversityShanghai 200433 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1996年第13卷第11期

页      面：867-869页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Supported by the National Natural Science Foundation of China 

主　　题：GaN method cubic 

摘      要：The electronic structures and the formation energies of native point defects in cubic GaN have been studied via the linear muffin-tin orbital *** results show that the nitrogen vacancy is the dominant defect in the intrinsic cubic *** the antisites and interstitial defects,it is found that a tetrahedral interstitial nitrogen atom surrounded by four Ga atoms NTGa is most easily formed,and the formation energy of NGaNGa antisite is much less than that of GaN *** changes of the density of states due to the introduction of defects are discussed.