Formation Energies and Electronic Structures of Native Defects in GaN
作者机构:Department of PhysicsFudan UniversityShanghai 200433
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:1996年第13卷第11期
页 面:867-869页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0704[理学-天文学]
基 金:Supported by the National Natural Science Foundation of China
摘 要:The electronic structures and the formation energies of native point defects in cubic GaN have been studied via the linear muffin-tin orbital *** results show that the nitrogen vacancy is the dominant defect in the intrinsic cubic *** the antisites and interstitial defects,it is found that a tetrahedral interstitial nitrogen atom surrounded by four Ga atoms NTGa is most easily formed,and the formation energy of NGaNGa antisite is much less than that of GaN *** changes of the density of states due to the introduction of defects are discussed.