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Electron Transport through a Silicon Atomic Chain

作     者:LIU Fu-Ti CHENG Yan CHENG Xiao-Hong YANG Fu-Bin CHEN Xiang-Rong 柳福提;程艳;程晓洪;羊富彬;陈向荣

作者机构:College of Physics and Electronic EngineeringYibin universityYibin 644000 College of Physical Science and TechnologySichuan UniversityChengdu 610064 

出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期:2013年第30卷第6期

页      面:186-189页

核心收录:

学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:Support by the National Natural Science Foundation of China under Grant Nos 11174214 and 11204192 the Research Project of Education Department in Sichuan Province under Grant No 13ZB0207 

主  题:equilibrium Electron function 

摘      要:The electron transport properties of a silicon atomic chain sandwiched between Au(100)leads are investigated by using the density functional theory combined with the non-equilibrium Green s function *** breaking process of Au-Si4-Au nanoscale junctions is *** conductance and the corresponding cohesion energy as a function of distance dz are *** the increase of distance,the conductance *** dz=18.098 A,there is a minimum value of cohesion *** nanoscale structure of junctions is most stable,and the equilibrium conductance is 1.71G_(0)(G_(0)=2e^(2)/h)at this *** I–V curves of junctions at equilibrium position show linear characteristics.

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