Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer

作     者：AO Jin-Ping ZENG Qing-Ming ZHAO Yong-Lin LI Xian-jie LIU Wei-Ji LIU Shi-Yong LIANG Chun-guang 敖金平;曾庆明;赵永林;李献杰;刘伟吉;刘式墉;梁春广

作者机构：Hebei Semiconductor Research InstituteShijiazhuang 050051 National Integrated Optoelectronics LaboratoryJilin UniversityChangchun 130023 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2000年第17卷第8期

页      面：619-620页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the High Technology Research and Development Programme of China under Contract 863-307-15-3(6) 

主　　题：temperature. Schottky HEMTs 

摘      要：The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room *** devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.