In Situ Rutherford Backscattering Spectrometry Analysis of Films by Combination with Sputter Etching

作     者：JIANG Lei LIU Bo ZHOU Zhu-ying HE Mian-hong ZHAO Guo-qing ZONG Xiang-fu 姜蕾;刘波;周筑颖;贺勉鸿;赵国庆;宗祥福

作者机构：Accelerator-based Atomic and Nuclear Physics LaboratoryInstitute of Modem PhysicsFudan UniversityShanghai 200433 National Micro-analysis Center for Microelectronic Materials and DevicesDepartment of Material ScienceFudan UniversityShanghai 200433 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1999年第16卷第10期

页      面：770-772页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No.19874068 the National High Performance Computing Fund 

主　　题：system removed separated 

摘      要：We have set up an experimental system consisting of an im gun and a Rutherford backscattering spectro-metry(RBS)analysis *** this system,in situ 2MeV*He+RBS analysis of films is carried out by combination with sputter etching cf low energy Ar+*** an example of the sputtering/RBS method,the analysis of three samples,i.e.,Si/(GexSi_(1-x)/Si)/Si(100),WSi_(x)/SiO_(2)/Si and CoSi_(x)/Si,is presented in this *** an appropriate fraction of the thick layer is removed by sputtering,the back edge of the Ge peak is separated from Si RBS spectmm on the interface and the O peak of the buried S1O2 layer can be *** change cf the doped Ti and W concentrations related to Co on the top surface is *** advantages of this analytical method and its possible applications in film are discussed.