Silicon-on-Insulator Structure Fabricated by Electron Beam Evaporation of Si on Porous Si and Epitaxial Layer Transfer

作     者：LIU Wei-Li DUO Xin-Zhong WANG Lian-Wei ZHANG Miao SHEN Qin-Wo LIN Cheng-Lu Paul K.Chu 刘卫丽;多新中;王连卫;张苗;沈勤我;林成鲁;朱剑豪

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 Department of Physics and Materials ScienceCity University of Hong Kong83 Tat Chee AvenueKowloonHong Kong 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2001年第18卷第5期

页      面：662-664页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the Special Funds for Major State Basic Research Projects(G20000365) the National Natural Science Foundation of China under Grant No.69906005 the Shanghai Research Center for Applied Physics(No.99JC14012) 

主　　题：Epitaxial porous Electron 

摘      要：Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam *** of reflection high energy electron diffraction,atomic force microscopy,cross-section transmission electron microscopy and Rutherford backscattering spectrometry and channeling(RBS/C)show a good quality of the epitaxial ***,silicon-on-insulator materials were successfully produced by bond and etch back of porous *** quality of the silicon on insulator samples was investigated by RBS/C and spreading resistance *** results show that both the crystalline quality and electrical quality are *** addition,the interface between the top Si layer and SiO2 buried layer is very sharp.