Investigation of nanometer-scale films using low angle Xray reflectivity analysis in IPOE
Investigation of nanometer-scale films using low angle Xray reflectivity analysis in IPOE作者机构:Institute of Precision Optical Engineering Tongji University Shanghai 200092 China
出 版 物:《Optoelectronics Letters》 (光电子快报(英文版))
年 卷 期:2007年第3卷第2期
页 面:88-90页
学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:This work was supported by the National Natural Science Foun-dation of China(10435050,60378021) the National 863-804Sustentation Fund(2006AA12Z139) the Program for New Cen-tury Excellent Talents in University(NCET-04-037) the RoyalSociety,London(NC/China/16660) Tongji University scien-tific fund
主 题:IPOE 纳米级薄膜 X线反射率分析 多层结构 参数
摘 要:The X-ray low angle reflectivity measurement is used to investigate single and bilayer films to determine the parameters of nanometer-scale structures,three effectual methods are presented by using X-ray reflectivity analysis to provide an accurate estimation of the nanometer film structures. The parameters of tungsten (W) single layer, such as the material density, interface roughness and deposition rate, were obtained easily and speedily. The base metal layer was introduced to measure the profiles of single low Z material film. A 0.3 nm chromium (Cr) film was also studied by low angle reflectivity analysis.